Senior Silicon Engineer, HBM Memory Subsystem Design, Integration and Validation

Minimum qualifications:

• Bachelor's degree in Electrical Engineering, Computer Engineering, Computer Science, or a related field, or equivalent practical experience.
• 10 years of experience in memory subsystem design, integration or verification.
• Experience with DRAM protocols (HBM2e/HBM3/HBM4 or DDR/LPDDR4x/5/5X) including Joint Electron Device Engineering Council (JEDEC) timing, refresh and training sequences.
• Experience with the DFI controller-to-PHY interface, leading a feature or IP block, and mentoring engineers.
• Experience in SystemVerilog RTL, simulation and debug flows.

Preferred qualifications:

• Master's degree or PhD in Electrical Engineering, Computer Engineering or Computer Science, with an emphasis on computer architecture.
• Experience delivering configurable, reusable IP-parameterization, release packaging, integration guides and customer-facing documentation.
  
• Experience integrating third-party controller and PHY IP (Rambus, Cadence/Synopsys class) into production silicon.
• Experience with SECDED per pseudo-channel, Reed–Solomon symbol correction, error queues, lane/row repair, address-folded CRC.
• Experience with UVM methodology and emulation-based pre-silicon validation, and familiarity with memory telemetry and Silicon Lifecycle Management (SLM) — per-pseudo-channel counters, link availability, continuous eye-opening monitors.

About the job

In this role, you’ll work to shape the future of AI/ML hardware acceleration. You will have an opportunity to drive cutting-edge TPU (Tensor Processing Unit) technology that powers Google's most demanding AI/ML applications. You’ll be part of a team that pushes boundaries, developing custom silicon solutions that power the future of Google's TPU. You'll contribute to the innovation behind products loved by millions worldwide, and leverage your design and verification expertise to verify complex digital designs, with a specific focus on TPU architecture and its integration within AI/ML-driven systems.

In this role, you will be part of a team developing ASICs used to accelerate and improve traffic efficiency in data centers. You will collaborate with members of architecture, verification, power and performance, and physical design to deliver high quality designs for next generation data center accelerators. You will solve technical problems with innovative micro-architecture and practical logic solutions, and evaluate design options with complexity, performance, power and area in mind.

The AI and Infrastructure team is redefining what’s possible. We empower Google customers with breakthrough capabilities and insights by delivering AI and Infrastructure at unparalleled scale, efficiency, reliability and velocity. Our customers include Googlers, Google Cloud customers, and billions of Google users worldwide.

We're the driving team behind Google's groundbreaking innovations, empowering the development of our cutting-edge AI models, delivering unparalleled computing power to global services, and providing the essential platforms that enable developers to build the future. From software to hardware our teams are shaping the future of world-leading hyperscale computing, with key teams working on the development of our TPUs, Vertex AI for Google Cloud, Google Global Networking, Data Center operations, systems research, and much more.

Responsibilities

• Define microarchitecture and develop high-quality RTL for memory controller frontends, guiding implementation trade-offs across performance, area, power, timing, and configurability for multi-channel and pseudo-channel configurations.
• Lead the design, integration, and delivery of complex memory controller backends and HBM/DDR PHY macros, owning quality closure (DFI pipe wrappers, clock/reset, PLL references, sideband bridging) and schedule from concept to tapeout.
• Collaborate with DV teams to build test plans, improve coverage, and validate design intent (UVM, emulation, ECC/RAS error injection), while tracking JEDEC specs and memory conferences for the latest HBM trends.
• Lead and support ATE testing, first-silicon lab bring-up, and physical characterization of the HBM PHY and controller across PVT (process, voltage, temperature) corners.
• Provide technical guidance and mentoring to engineers while promoting best practices in RTL design, review, documentation, methodology, and systematic root-cause debug.